| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 9.4 | |
| 9@10V | |
| 15@4.5V|28@10V | |
| 28 | |
| 1376@25V | |
| 1980 | |
| 15.6 | |
| 7.4 | |
| 32 | |
| 9.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) mm |
| Package Width | 4(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Create an effective common drain amplifier using this NTMS4916NR2G power MOSFET from ON Semiconductor. Its maximum power dissipation is 1980 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Counter UAV Threats With Smart Defenses
Learn how to combine intelligent processing, advanced sensing and rapid response into a unified counter-UAV defensive system.