| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 9.9 | |
| 9@10V | |
| 12.2@4.5V|25@10V | |
| 25 | |
| 1630@25V | |
| 2100 | |
| 9.8 | |
| 3.7 | |
| 29 | |
| 10.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) |
| Package Width | 4(Max) |
| Package Length | 5(Max) |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Thanks to ON Semiconductor, both your amplification and switching needs can be taken care of with one component: the NTMS4801NR2G power MOSFET. Its maximum power dissipation is 2100 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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