| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Dual | |
| Enhancement | |
| N|P | |
| 2 | |
| 20@N Channel|8@P Channel | |
| ±12@N Channel|±8@P Channel | |
| 0.91@N Channel|1.1@P Channel | |
| 375@4.5V@N Channel|300@4.5V@P Channel | |
| 1.3@4.5V@N Channel|2.2@4.5V@P Channel | |
| 33@20V@N Channel|160@8V@P Channel | |
| 550 | |
| 506@N Channel|36@P Channel | |
| 227@N Channel|23@P Channel | |
| 786@N Channel|50@P Channel | |
| 83@N Channel|13@P Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.9 mm |
| Package Width | 1.25 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-88 |
| 6 |
Compared to traditional transistors, NTJD4105CT1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 550 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes tmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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