| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| ±8 | |
| 3.3 | |
| 75@4.5V | |
| 7@4.5V | |
| 550@5V | |
| 2000 | |
| 100 | |
| 20 | |
| 110 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.9 mm |
| Package Width | 1.5 mm |
| Package Length | 3 mm |
| PCB changed | 6 |
| Standard Package Name | SO |
| Supplier Package | TSOP |
| 6 | |
| Lead Shape | Gull-wing |
If you need to either amplify or switch between signals in your design, then ON Semiconductor's NTGS3433T1G power MOSFET is for you. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Smarter Drone Systems from Concept to Deployment
Download the playbook and get equipped with powerful tools and smart strategies for designing agile, efficient, modular drone systems.