onsemiNSS40300MZ4T1G通用双极型晶体管
Trans GP BJT PNP 40V 3A 2000mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 40 | |
| 40 | |
| 6 | |
| -55 to 150 | |
| 1@0.1A@1A | |
| 0.07@50mA@0.5A|0.15@20mA@1A|0.4@0.3A@3A | |
| 3 | |
| 100 | |
| 200@0.5A@1V|175@1A@1V|100@3A@1V | |
| 2000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.57 mm |
| Package Width | 3.5 mm |
| Package Length | 6.5 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| 4 | |
| Lead Shape | Gull-wing |
Design various electronic circuits with this versatile PNP NSS40300MZ4T1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Counter UAV Threats With Smart Defenses
Learn how to combine intelligent processing, advanced sensing and rapid response into a unified counter-UAV defensive system.