| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 4.7 | |
| -55 to 150 | |
| 0.1 | |
| 0.25@1mA@10mA | |
| 338 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 50 to 120 | |
| Mounting | Surface Mount |
| Package Height | 1.09 mm |
| Package Width | 1.5 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SC-59 |
| 3 | |
| Lead Shape | Gull-wing |
Are you looking to build a digital signal processing device? The NPN MUN2233T1G digital transistor, developed by ON Semiconductor, can provide a solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 338 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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