| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Material | SiC |
| Configuration | Dual Common Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 700 |
| Maximum Gate-Source Voltage (V) | 25 |
| Operating Junction Temperature (°C) | -40 to 175 |
| Maximum Continuous Drain Current (A) | 353 |
| Maximum Drain-Source Resistance (mOhm) | 6.4@20V |
| Typical Gate Charge @ Vgs (nC) | 645@20V |
| Typical Input Capacitance @ Vds (pF) | 13500@700V |
| Maximum Power Dissipation (mW) | 988000 |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 35 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Typical Turn-On Delay Time (ns) | 40 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 125 |
| Mounting | Through Hole |
| Package Height | 12 |
| Package Width | 42.1 |
| Package Length | 73 |
| PCB changed | 25 |
| Pin Count | 25 |
