Diodes IncorporatedMMDT4401-7-F通用双极型晶体管
Trans GP BJT NPN 40V 0.6A 200mW 6-Pin SOT-363 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Dual | |
| 2 | |
| 60 | |
| 40 | |
| 6 | |
| 0.95@15mA@150mA|1.2@50mA@500mA | |
| 0.4@15mA@150mA|0.75@50mA@500mA | |
| 0.6 | |
| 20@100uA@1V|40@1mA@1V|80@10mA@1V|100@150mA@1V|40@500mA@2V | |
| 200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.95 |
| Package Width | 1.3 |
| Package Length | 2.15 |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-363 |
| 6 | |
| Lead Shape | Gull-wing |
Diodes Zetex brings you the solution to your high-voltage BJT needs with their NPN MMDT4401-7-F general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Smarter Drone Systems from Concept to Deployment
Download the playbook and get equipped with powerful tools and smart strategies for designing agile, efficient, modular drone systems.