onsemiMMBT6427LT1G达林顿双极型晶体管

Compared to other transistors, the NPN MMBT6427LT1G Darlington transistor from ON Semiconductor can provide you with a higher current gain value. This product's maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 10000@10mA@5 V|20000@100mA@5V|14000@500mA@5V. It has a maximum collector emitter saturation voltage of 1.2@0.5mA@50mA|1.5@0.5mA@500mA V. This Darlington transistor array's maximum emitter base voltage is 12 V, while its maximum base emitter saturation voltage is 2@0.5mA@500mA V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 12 V. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C.