onsemiMMBT589LT1G通用双极型晶体管

Trans GP BJT PNP 30V 1A 710mW 3-Pin SOT-23 T/R

Implement this versatile PNP MMBT589LT1G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 710 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

406 个零件: 可以在 4 天内配送

    Total$2.75Price for 10

    • 可以在 4 天内配送

      Ships from:
      香港
      Date Code:
      +
      Manufacturer Lead Time:
      0 星期
      • In Stock: 406
      • Price: $0.275

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