STMicroelectronicsMJE340通用双极型晶体管
Trans GP BJT NPN 300V 0.5A 2800mW 3-Pin(3+Tab) SOT-32 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 300 | |
| 300 | |
| 3 | |
| 0.5@10mA@100mA | |
| 0.5 | |
| 100000 | |
| 30@50mA@10V | |
| 2800 | |
| -65 | |
| 150 | |
| Tube | |
| Industrial | |
| Mounting | Through Hole |
| Package Height | 10.8(Max) |
| Package Width | 2.7(Max) |
| Package Length | 7.8(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-32 |
| 3 | |
| Lead Shape | Through Hole |
Jump-start your electronic circuit design with this versatile NPN MJE340 GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 3 V. Its maximum power dissipation is 2800 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 3 V.
| EDA / CAD Models |
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