onsemiMJE15031G通用双极型晶体管
Trans GP BJT PNP 150V 8A 50000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 150 | |
| 150 | |
| 5 | |
| -65 to 150 | |
| 2 | |
| 0.5@0.1A@1A | |
| 8 | |
| 10000 | |
| 40@100mA@2V|40@2A@2V|40@3A@2V|20@4A@2V | |
| 50000 | |
| -65 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 8.9 |
| Package Width | 4.45 |
| Package Length | 10.1 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Compared to other transistors, the PNP MJE15031G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 50000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
Smarter Drone Systems from Concept to Deployment
Download the playbook and get equipped with powerful tools and smart strategies for designing agile, efficient, modular drone systems.