| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 100 | |
| 100 | |
| 7 | |
| -65 to 150 | |
| 1 | |
| 1.8@200mA@2A | |
| 0.3@50mA@500mA|0.6@100mA@1A | |
| 4 | |
| 100 | |
| 40@200mA@1V|15@1A@1V | |
| 1400 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) |
| Package Width | 6.22(Max) |
| Package Length | 6.73(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
The versatility of this PNP MJD253T4G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1400 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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