| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 100 | |
| 90 | |
| 4 | |
| 1.3@0.75A@7.5A | |
| 0.8@0.75A@7.5A | |
| 30 | |
| 1000 | |
| 25@7.5A@2V | |
| 200000 | |
| -65 | |
| 200 | |
| Tray | |
| Mounting | Through Hole |
| Package Height | 8.51(Max) |
| Package Width | 26.67(Max) |
| Package Length | 39.37 |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-3 |
| 3 | |
| Lead Shape | Through Hole |
Add switching and amplifying capabilities to your electronic circuit with this PNP MJ4502G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 200000 mW. This component comes in tray packaging, useful for fast picking and placing of your parts. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 90 V and a maximum emitter base voltage of 4 V.
| EDA / CAD Models |
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