MagnaChip SemiconductorMDV1595SURHMOSFETs
Trans MOSFET N-CH 30V 13.4A 8-Pin Power DFN EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±12 | |
| 2 | |
| 13.4 | |
| 100 | |
| 500 | |
| 10.7@10V | |
| 22.3@10V|9.9@4.5V | |
| 22.3 | |
| 1426@15V | |
| 3400 | |
| 4.3 | |
| 3.1 | |
| 33.5 | |
| 7.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) |
| Package Width | 3.2(Max) |
| Package Length | 3.2(Max) |
| PCB changed | 8 |
| Standard Package Name | DFN |
| Supplier Package | Power DFN EP |
| 8 |
As an alternative to traditional transistors, the MDV1595SURH power MOSFET from MagnaChip Semiconductor can be used to both amplify and switch electronic signals. Its maximum power dissipation is 3400 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with tmos technology.
| EDA / CAD Models |
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