IXYSIXGH32N170IGBT 芯片

Trans IGBT Chip N-CH 1700V 75A 350W 3-Pin(3+Tab) TO-247AD

This IXGH32N170 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 350000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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