IXYSIXGA20N120A3IGBT 芯片

Trans IGBT Chip N-CH 1200V 40A 180W 3-Pin(2+Tab) D2PAK

The IXGA20N120A3 IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 180000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

A datasheet is only available for this product at this time.

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