| 欧盟RoHS指令 | Compliant with Exemption |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Material | Si |
| Process Technology | HiperFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 600 |
| Maximum Gate-Source Voltage (V) | ±30 |
| Maximum Continuous Drain Current (A) | 32 |
| Maximum Drain-Source Resistance (mOhm) | 150@10V |
| Typical Gate Charge @ Vgs (nC) | 150@10V |
| Typical Gate Charge @ 10V (nC) | 150 |
| Typical Input Capacitance @ Vds (pF) | 8860@25V |
| Maximum Power Dissipation (mW) | 300000 |
| Typical Fall Time (ns) | 22 |
| Typical Rise Time (ns) | 25 |
| Typical Turn-Off Delay Time (ns) | 85 |
| Typical Turn-On Delay Time (ns) | 30 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Through Hole |
| Package Height | 21.34(Max) mm |
| Package Width | 5.21(Max) mm |
| Package Length | 16.13(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SO |
| Supplier Package | ISOPLUS 247 |
| Pin Count | 3 |
