| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 7.7 | |
| 100 | |
| 25 | |
| 200@10V | |
| 11(Max)@10V | |
| 11(Max) | |
| 5.8(Max) | |
| 3.1(Max) | |
| 200 | |
| 300@25V | |
| 29@25V | |
| 2 | |
| 160 | |
| 2500 | |
| 19 | |
| 50 | |
| 13 | |
| 10 | |
| -55 | |
| 150 | |
| 31 | |
| 70 | |
| 1.6 | |
| 20 | |
| Mounting | Through Hole |
| Package Height | 6.22(Max) mm |
| Package Width | 2.39(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | IPAK |
| 3 | |
| Lead Shape | Through Hole |
Create an effective common drain amplifier using this IRFU014PBF power MOSFET from Vishay. Its maximum power dissipation is 2500 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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