| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 7.8 | |
| 100 | |
| 100 | |
| 1200@10V | |
| 200(Max)@10V | |
| 200(Max) | |
| 110(Max) | |
| 24(Max) | |
| 3800 | |
| 3100@25V | |
| 490@25V | |
| 2 | |
| 800 | |
| 190000 | |
| 39 | |
| 38 | |
| 120 | |
| 19 | |
| -55 | |
| 150 | |
| 20 | |
| 31 | |
| 650 | |
| 1.8 | |
| Mounting | Through Hole |
| Package Height | 20.82(Max) |
| Package Width | 5.31(Max) |
| Package Length | 15.87(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AC |
| 3 | |
| Lead Shape | Through Hole |
Compared to traditional transistors, IRFPE50PBF power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 190000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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