| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 6.5 | |
| 100 | |
| 100 | |
| 800@10V | |
| 29(Max)@10V | |
| 29(Max) | |
| 15(Max) | |
| 5.4(Max) | |
| 1900 | |
| 700@25V | |
| 40@25V | |
| 2 | |
| 200 | |
| 74000 | |
| 24 | |
| 27 | |
| 28 | |
| 12 | |
| -55 | |
| 150 | |
| 26 | |
| 5.8 | |
| 200 | |
| 6.5 | |
| 0.6 | |
| 3.7 | |
| 20 | |
| Mounting | Through Hole |
| Package Height | 8.89 |
| Package Width | 4.45 |
| Package Length | 10.28 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Create an effective common drain amplifier using this IRF9630PBF power MOSFET from Vishay. Its maximum power dissipation is 74000 mW. This device utilizes HEXFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Smarter Drone Systems from Concept to Deployment
Download the playbook and get equipped with powerful tools and smart strategies for designing agile, efficient, modular drone systems.