| 欧盟RoHS指令 | Compliant with Exemption |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | COMPONENTS |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Material | Si |
| Configuration | Single |
| Process Technology | HEXFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 100 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 33 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 25 |
| Maximum Drain-Source Resistance (mOhm) | 44@10V |
| Typical Gate Charge @ Vgs (nC) | 71(Max)@10V |
| Typical Gate Charge @ 10V (nC) | 71(Max) |
| Typical Gate to Drain Charge (nC) | 14(Max) |
| Typical Gate to Source Charge (nC) | 14(Max) |
| Typical Reverse Recovery Charge (nC) | 505 |
| Typical Switch Charge (nC) | 21(Max) |
| Typical Input Capacitance @ Vds (pF) | 1960@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 40@25V |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Output Capacitance (pF) | 250@25V |
| Maximum Power Dissipation (mW) | 130000 |
| Typical Fall Time (ns) | 35 |
| Typical Rise Time (ns) | 35 |
| Typical Turn-Off Delay Time (ns) | 39 |
| Typical Turn-On Delay Time (ns) | 11 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tube |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 110 |
| Typical Gate Plateau Voltage (V) | 4.4 |
| Typical Reverse Recovery Time (ns) | 115 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Mounting | Through Hole |
| Package Height | 16.13(Max) |
| Package Width | 4.83(Max) |
| Package Length | 10.75(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB Full-Pak |
| Pin Count | 3 |
| Lead Shape | Through Hole |
