| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 600 |
| Maximum Gate-Source Voltage (V) | 20 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 30 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 2 |
| Maximum Drain-Source Resistance (mOhm) | 125@10V |
| Typical Gate Charge @ Vgs (nC) | 56@10V |
| Typical Gate Charge @ 10V (nC) | 56 |
| Typical Gate to Drain Charge (nC) | 20 |
| Typical Gate to Source Charge (nC) | 16 |
| Typical Reverse Recovery Charge (nC) | 7000 |
| Typical Input Capacitance @ Vds (pF) | 2660@100V |
| Minimum Gate Threshold Voltage (V) | 3.5 |
| Typical Output Capacitance (pF) | 110 |
| Maximum Power Dissipation (mW) | 219000 |
| Typical Fall Time (ns) | 5 |
| Typical Rise Time (ns) | 9 |
| Typical Turn-Off Delay Time (ns) | 44 |
| Typical Turn-On Delay Time (ns) | 14 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tube |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 113@10V |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 87 |
| Typical Diode Forward Voltage (V) | 0.9 |
| Typical Gate Plateau Voltage (V) | 6.1 |
| Typical Reverse Recovery Time (ns) | 385 |
| Typical Gate Threshold Voltage (V) | 4 |
| Mounting | Through Hole |
| Package Height | 21.1(Max) mm |
| Package Width | 5.21(Max) mm |
| Package Length | 16.3(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
