Infineon Technologies AGIPD12CN10NGATMA1MOSFETs
Trans MOSFET N-CH 100V 67A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| 67 | |
| 100 | |
| 1 | |
| 12.4@10V | |
| 49@10V | |
| 49 | |
| 3250@50V | |
| 125000 | |
| 8 | |
| 21 | |
| 32 | |
| 17 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 9.8@10V|9.3@10V|9.5@10V | |
| Mounting | Surface Mount |
| Package Height | 2.41(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The IPD12CN10NGATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos 2 technology.
| EDA / CAD Models |
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