| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Configuration | Dual Dual Drain |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 150 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 6 |
| Maximum Drain-Source Resistance (mOhm) | 62@10V |
| Typical Gate Charge @ Vgs (nC) | 13@6.0V|20@10V |
| Typical Input Capacitance @ Vds (pF) | 1100@75V |
| Maximum Power Dissipation (mW) | 3000 |
| Typical Fall Time (ns) | 19 |
| Typical Rise Time (ns) | 1 |
| Typical Turn-Off Delay Time (ns) | 40 |
| Typical Turn-On Delay Time (ns) | 19 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
