| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN|PNP | |
| Bipolar Small Signal | |
| Si | |
| Dual | |
| 2 | |
| 60@NPN|50@PNP | |
| 50 | |
| 5 | |
| 0.25@10mA@100mA@NPN|0.3@10mA@100mA@PNP | |
| 0.15 | |
| 200@2mA@6V | |
| 200 | |
| -55 | |
| 125 | |
| Mounting | Surface Mount |
| Package Height | 0.9 |
| Package Width | 1.25 |
| Package Length | 2 |
| PCB changed | 6 |
| Supplier Package | US |
| 6 |
Compared to other transistors, the npn and PNP HN1B04FU-GR(L,F,T) general purpose bipolar junction transistor, developed by Toshiba, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 125 °C.
| EDA / CAD Models |
Counter UAV Threats With Smart Defenses
Learn how to combine intelligent processing, advanced sensing and rapid response into a unified counter-UAV defensive system.