| 欧盟RoHS指令 | Compliant |
| 环保无铅 | LTB |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Material | GaN |
| Configuration | Single Dual Gate |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 650 |
| Maximum Gate-Source Voltage (V) | 7 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 22.5 |
| Maximum Drain-Source Resistance (mOhm) | 90@6V |
| Typical Gate Charge @ Vgs (nC) | 4.5@6V |
| Typical Input Capacitance @ Vds (pF) | 185@400V |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Surface Mount |
| Package Height | 0.54 |
| Package Width | 4.48 |
| Package Length | 5.55 |
| PCB changed | 4 |
| Standard Package Name | LGA |
| Supplier Package | ULGA |
| Pin Count | 4 |
