Diodes IncorporatedDXT5401-13通用双极型晶体管
Trans GP BJT PNP 150V 0.6A 1000mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 160 | |
| 150 | |
| 5 | |
| 1@1mA@10mA|1@5mA@50mA | |
| 0.2@1mA@10mA|0.5@5mA@50mA | |
| 0.6 | |
| 50@1mA@5V|60@10mA@5V|50@50mA@5V | |
| 1000 | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5 |
| Package Width | 2.5 |
| Package Length | 4.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| 4 | |
| Lead Shape | Flat |
Look no further than Diodes Zetex's PNP DXT5401-13 general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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