| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| -6 | |
| 0.9 | |
| 2.2 | |
| 100 | |
| 1 | |
| 53@4.5V | |
| 2.9@4.5V | |
| 0.28 | |
| 0.55 | |
| 394@6V | |
| 1000 | |
| 21 | |
| 4 | |
| 58 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.6 | |
| Mounting | Surface Mount |
| Package Height | 0.28(Max) mm |
| Package Width | 1 mm |
| Package Length | 1 mm |
| PCB changed | 4 |
| Standard Package Name | BGA |
| Supplier Package | DSBGA |
| 4 | |
| Lead Shape | Ball |
This CSD23202W10T power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology.
| EDA / CAD Models |
Smarter Drone Systems from Concept to Deployment
Download the playbook and get equipped with powerful tools and smart strategies for designing agile, efficient, modular drone systems.