| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 1.9 | |
| 23.5 | |
| 100 | |
| 1 | |
| 3.1@10V | |
| 17.5@4.5V | |
| 4.7 | |
| 5.8 | |
| 2710@15V | |
| 3100 | |
| 5.2 | |
| 17 | |
| 14.8 | |
| 9.7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.5 | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 5.75 mm |
| Package Length | 4.9 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | VSONP EP |
| 8 | |
| Lead Shape | No Lead |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Texas Instruments' CSD17553Q5A power MOSFET can provide a solution. Its maximum power dissipation is 3100 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology.
| EDA / CAD Models |
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