| 欧盟RoHS指令 | Compliant with Exemption |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Material | SiC |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 23 |
| Maximum Gate Threshold Voltage (V) | 3.6 |
| Maximum Continuous Drain Current (A) | 719(Typ) |
| Maximum Gate-Source Leakage Current (nA) | 2000 |
| Maximum IDSS (uA) | 250 |
| Maximum Drain-Source Resistance (mOhm) | 3.55@15V |
| Typical Gate Charge @ Vgs (nC) | 1362@15V |
| Typical Input Capacitance @ Vds (pF) | 39600@800V |
| Maximum Power Dissipation (mW) | 2308000(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 175 |
| Supplier Temperature Grade | Industrial |
| Mounting | Screw |
| Package Height | 30.03 mm |
| Package Width | 60.44 mm |
| Package Length | 106.4 mm |
| PCB changed | 7 |
| Pin Count | 7 |
