| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.8um to 3um | |
| Enhancement | |
| N | |
| 1 | |
| 50 | |
| ±20 | |
| 1.5 | |
| -55 to 150 | |
| 0.2 | |
| 100 | |
| 0.5 | |
| 3500@5V | |
| 40@25V | |
| 3.5@25V | |
| 0.85 | |
| 12 | |
| 225 | |
| 20(Max) | |
| 20(Max) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20 | |
| 0.8 | |
| 1.9 | |
| Mounting | Surface Mount |
| Package Height | 0.94 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The BSS138LT3G power MOSFET from ON Semiconductor provides the solution. Its maximum power dissipation is 225 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes tmos technology.
| EDA / CAD Models |
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