| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 80 | |
| 5 | |
| 0.8@0.3A@3A | |
| 4 | |
| 15@10mA@5V|40@500mA@1V|15@2A@1V | |
| 36000 | |
| -55 | |
| 150 | |
| Box | |
| Mounting | Through Hole |
| Package Height | 10.85 |
| Package Width | 2.7 |
| Package Length | 7.6 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-225 |
| 3 | |
| Lead Shape | Through Hole |
Compared to other transistors, the PNP BD442G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 36000 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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