Taiwan SemiconductorBC857B RF通用双极型晶体管

Trans GP BJT PNP 45V 0.1A 3-Pin SOT-23 T/R

Jump-start your electronic circuit design with this versatile PNP BC857B RF GP BJT from Taiwan Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

A datasheet is only available for this product at this time.

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