| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 65 | |
| 5 | |
| 0.9(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA | |
| 0.3@0.5mA@10mA|0.65@5mA@100mA | |
| 0.1 | |
| 15 | |
| 220@2mA@5V | |
| 640 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.5 |
| Package Width | 0.8 |
| Package Length | 1.2 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-723 |
| 3 | |
| Lead Shape | Flat |
Add switching and amplifying capabilities to your electronic circuit with this PNP BC856BM3T5G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 640 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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