Taiwan SemiconductorBC847C RF通用双极型晶体管
Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 50 | |
| 45 | |
| 6 | |
| -55 to 150 | |
| 1.1@5mA@100mA | |
| 0.5@5mA@100mA | |
| 0.1 | |
| 100 | |
| 420@2mA@5V | |
| 200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.1(Max) |
| Package Width | 1.4(Max) |
| Package Length | 3(Max) |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Implement this NPN BC847C RF GP BJT from Taiwan Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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