Diodes IncorporatedBC847BLP-7通用双极型晶体管
Trans GP BJT NPN 45V 0.1A 1000mW 3-Pin X1-DFN T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 50 | |
| 45 | |
| 6 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| 0.25@0.5mA@10mA|0.6@5mA@100mA | |
| 0.1 | |
| 200@2mA@5V | |
| 1000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.47 |
| Package Width | 1 |
| Package Length | 0.6 |
| PCB changed | 3 |
| Standard Package Name | DFN |
| Supplier Package | X1-DFN |
| 3 | |
| Lead Shape | No Lead |
The NPN BC847BLP-7 general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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