Taiwan SemiconductorBC807-40 RF通用双极型晶体管
Trans GP BJT PNP 45V 0.5A 300mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 50 | |
| 45 | |
| 5 | |
| 1.2@50mA@500mA | |
| 0.7@50mA@500mA | |
| 0.5 | |
| 250@100mA@1V | |
| 300 | |
| 100 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.95(Max) |
| Package Width | 1.4(Max) |
| Package Length | 3.05(Max) |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
The PNP BC807-40 RF general purpose bipolar junction transistor, developed by Taiwan Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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