Diodes Incorporated2DB1188Q-13通用双极型晶体管
Trans GP BJT PNP 32V 2A 1000mW 4-Pin(3+Tab) SOT-89 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Yes |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 40 | |
| 32 | |
| 6 | |
| 0.8@0.2A@2A | |
| 2 | |
| 120@0.5A@3V | |
| 1000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5 |
| Package Width | 2.5 |
| Package Length | 4.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| 4 | |
| Lead Shape | Flat |
Look no further than Diodes Zetex's PNP 2DB1188Q-13 general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 32 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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