Nexperia is now offering its industry-leading 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging, with a diverse choice of mΩ RDSon values. This announcement follows Nexperia’s late 2023 release of two discrete SiC MOSFETs in 3 and 4-pin TO-247 packaging and is the latest offering in a series that will see its SiC MOSFET portfolio swiftly expand.
Nexperia has unveiled its first silicon carbide (SiC) MOSFETs, featuring two 1200 V discrete devices designed to meet the high demands of industrial power switching.
These innovative MOSFETs, with RDS(on) values of 17, 30, 40, 60 and 80 mΩ in flexible package options, promise exceptional performance in electric vehicle charging stations, uninterruptible power supplies, and inverters for solar and energy storage systems.
Partnering with Mitsubishi Electric, Nexperia leverages advanced process technology to ensure best-in-class temperature stability, low gate drive losses, and enhanced device reliability. This launch marks the beginning of a broader SiC MOSFET portfolio, aiming to drive global energy transition with robust, high-performance solutions.
- Excellent RDSon temperature stability
- Very low switching losses
- Fast reverse recovery
- Fast switching speed
- Temperature independent turn-off switching losses
- Very fast and robust intrinsic body diode
- Faster commutation and improved switching due to the additional Kelvin source pin
- E-vehicle charging infrastructure
- Photovoltaic inverters
- Switch mode power supply
- Uninterruptable power supply
- Motor drives
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