Infineon Technologies AGIMBF170R1K0M1XTMA1MOSFETs

Infineon’s CoolSiC™ 1700 V, 1000 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Summary of Features

• • Optimized for fly-back topologies
• • Extremely low switching loss
• • 12 V / 0 V gate-source voltage compatible with fly-back controllers
• • Fully controllable dV/dt for EMI optimization
• • SMD package with enhanced creepage and clearance distances, > 7 mm

Benefits

• • 1700 V SiC MOSFET enables simple single-ended fly-back topology at high efficiency level for use in auxiliary power supplies
• • SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink
• • Reduced isolation effort due to extended creepage and clearance distances of package
• • Reduced system complexity
• • High power density

Potential Applications

• • Energy Storage Systems
• • Fast EV charging
• • Industrial drives
• • Power Management (SMPS) - Reference Design
• • Solutions for solar energy systems

Related Products

Reference Board: REF_62W_FLY_1700V_SIC
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