Fototransistor

PT1302B/C2

No Phototransistor Chip Silicon 940nm 2-Pin T-1 3/4 Bag

EVERLIGHT Electronics Co., Ltd

Specifiche Tecniche del Prodotto

• RoHS (Unione Europea)

  Compliant

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active-Unconfirmed

• Codice HTS

  8541.49.95.00

• Automotive

  No

• PPAP

  No

• Type

  Chip

• Phototransistor Type

  Phototransistor

• Lens Shape Type

  Domed

• Lens Color

  Black

• Material

  Silicon

• Number of Channels per Chip

  1

• Polarity

  NPN

• Viewing Orientation

  Top View

• Peak Wavelength (nm)

  940

• Maximum Rise Time (ns)

  15000(Typ)

• Maximum Fall Time (ns)

  15000(Typ)

• Maximum Light Current (uA)

  1000(Typ)

• Maximum Collector Current (mA)

  20

• Maximum Dark Current (nA)

  100

• Maximum Emitter-Collector Voltage (V)

  3

• Maximum Collector-Emitter Voltage (V)

  30

• Maximum Collector-Emitter Saturation Voltage (V)

  0.4

• Maximum Power Dissipation (mW)

  75

• Fabrication Technology

  NPN Transistor

• Minimum Operating Temperature (°C)

  -25

• Maximum Operating Temperature (°C)

  85

• Packaging

  Bag

• Mounting

  Through Hole

• Package Height

  8.5

• Package Width

  4.6

• Package Length

  4.6

• PCB changed

  2

• Supplier Package

  T-1 3/4

• Pin Count

  2

• Lead Shape

  Through Hole