Fototransistor

BPV11F

No Phototransistor Chip Silicon 930nm 2-Pin T-1 3/4

Vishay

Specifiche Tecniche del Prodotto

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.49.80.00

• Automotive

  No

• PPAP

  No

• Type

  Chip

• Phototransistor Type

  Phototransistor

• Lens Shape Type

  Domed

• Material

  Silicon

• Number of Channels per Chip

  1

• Polarity

  NPN

• Half Intensity Angle Degrees (°)

  30

• Viewing Orientation

  Top View

• Peak Wavelength (nm)

  930

• Cut-Off Filter

  Visible Cut-off

• Maximum Light Current (uA)

  9000(Typ)

• Maximum Collector Current (mA)

  50

• Maximum Dark Current (nA)

  50

• Maximum Collector-Emitter Voltage (V)

  70

• Maximum Collector-Emitter Saturation Voltage (V)

  0.3

• Maximum Power Dissipation (mW)

  150

• Fabrication Technology

  NPN Transistor

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  100

• Diameter

  5.75

• Mounting

  Through Hole

• Package Height

  8.6

• PCB changed

  2

• Supplier Package

  T-1 3/4

• Pin Count

  2

• Lead Shape

  Through Hole

• Family/Series

  BPV11F

• ROHS Version

  2011/65/EU, 2015/863