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QSE114|ONSEMI|simage
QSE114|ONSEMI|limage
Fototransistor

QSE114

No Phototransistor Chip Silicon 880nm 2-Pin Side Looker Bag

onsemi
Datasheets 

Product Technical Specifications
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    8541.49.70.80
  • Automotive
    No
  • PPAP
    No
  • Type
    Chip
  • Phototransistor Type
    Phototransistor
  • Lens Shape Type
    Domed
  • Lens Color
    Black Transparent
  • Material
    Silicon
  • Number of Channels per Chip
    1
  • Polarity
    NPN
  • Half Intensity Angle Degrees (°)
    25
  • Viewing Orientation
    Side View
  • Peak Wavelength (nm)
    880
  • Cut-Off Filter
    Visible Cut-off
  • Maximum Rise Time (ns)
    8000(Typ)
  • Maximum Fall Time (ns)
    8000(Typ)
  • Maximum Light Current (uA)
    1000(Min)
  • Maximum Collector Current (mA)
    5
  • Maximum Dark Current (nA)
    100
  • Maximum Emitter-Collector Voltage (V)
    5
  • Maximum Collector-Emitter Voltage (V)
    30
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.4
  • Maximum Power Dissipation (mW)
    100
  • Fabrication Technology
    NPN Transistor
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    100
  • Packaging
    Bag
  • Mounting
    Through Hole
  • Package Height
    5.08 mm
  • Package Width
    2.54 mm
  • Package Length
    4.44 mm
  • PCB changed
    2
  • Supplier Package
    Side Looker
  • Pin Count
    2

Documentation and Resources

Datasheets
Design resources