Product Technical Specifications
RoHS (Unione Europea)
Supplier Unconfirmed
ECCN (Stati Uniti)
3A001.a.2.c
Stato del componente
Unconfirmed
Codice HTS
8541.49.70.80
Automotive
Unknown
PPAP
Unknown
Type
Module
Phototransistor Type
Phototransistor
Lens Shape Type
Domed
Material
Silicon
Number of Channels per Chip
1
Polarity
NPN
Half Intensity Angle Degrees (°)
10
Viewing Orientation
Top View
Peak Wavelength (nm)
800
Maximum Rise Time (ns)
3000(Typ)
Maximum Light Current (uA)
16000
Maximum Collector Current (mA)
50
Maximum Dark Current (nA)
100
Maximum Emitter-Collector Voltage (V)
7(Min)
Maximum Collector-Emitter Voltage (V)
30(Min)
Maximum Collector-Emitter Saturation Voltage (V)
0.2
Maximum Power Dissipation (mW)
250
Fabrication Technology
NPN Transistor
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
125
Diameter
5.84(Max) mm
Mounting
Through Hole
Package Height
6.1(Max) mm
PCB changed
3
Standard Package Name
TO
Supplier Package
TO-46
Pin Count
3