MOSFETs

TSM650P03CX RFG

Trans MOSFET P-CH 30V 4.1A 3-Pin SOT-23 T/R

Taiwan Semiconductor

Especificaciones técnicas del producto

• RoHS (Unión Europea)

  Compliant

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  Active

• Código HTS

  8541.29.00.55

• SVHC

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  P

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  30

• Maximum Gate-Source Voltage (V)

  ±12

• Maximum Gate Threshold Voltage (V)

  0.9

• Maximum Continuous Drain Current (A)

  4.1

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  65@10V

• Typical Gate Charge @ Vgs (nC)

  8@4.5V

• Typical Input Capacitance @ Vds (pF)

  810@15V

• Maximum Power Dissipation (mW)

  1560

• Typical Fall Time (ns)

  12.4

• Typical Rise Time (ns)

  19.4

• Typical Turn-Off Delay Time (ns)

  45.9

• Typical Turn-On Delay Time (ns)

  5.4

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  1.1(Max)

• Package Width

  1.4(Max)

• Package Length

  3(Max)

• PCB changed

  3

• Standard Package Name

  SOT

• Supplier Package

  SOT-23

• Pin Count

  3

• Lead Shape

  Gull-wing

• Family/Series

  TSM650P03CX

• ALIAS

  TSM650P03CX

• ROHS Version

  2011/65/EU, 2015/863

• Quantity Packaging

  3000

• MSL

  1