Diodes IncorporatedZXT12P12DXTAGP BJT
Trans GP BJT PNP 12V 3A 1250mW 8-Pin MSOP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Dual Dual Collector | |
| 2 | |
| 20 | |
| 12 | |
| 7.5 | |
| 0.95@30mA@3A | |
| 0.011@10mA@0.1A|0.085@20mA@1A|0.27@30mA@3A|0.19@150mA@3A | |
| 3 | |
| 300@10mA@2V|300@1A@2V|200@3A@2V|20@12A@2V | |
| 1250 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.95(Max) |
| Package Width | 3.1(Max) |
| Package Length | 3.1(Max) |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | MSOP |
| 8 | |
| Lead Shape | Gull-wing |
Diodes Zetex brings you the solution to your high-voltage BJT needs with their PNP ZXT12P12DXTA general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 7.5 V. Its maximum power dissipation is 1250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 7.5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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