| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 2.3 | |
| 200@4.5V | |
| 5.8(Max)@4.5V | |
| 320@15V | |
| 1700 | |
| 19.2 | |
| 15.4 | |
| 12 | |
| 4.1 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.3(Max) |
| Package Width | 1.8(Max) |
| Package Length | 3.1(Max) |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 6 | |
| Lead Shape | Gull-wing |
Compared to traditional transistors, ZXM62P02E6TA power MOSFETs, developed by Diodes Zetex, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1700 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Contrarreste eficazmente amenazas de drones
Descubra cómo combinar procesamiento inteligente, detección avanzada y respuesta rápida en un sistema de defensa unificado contra los drones.

