| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 200 | |
| 100 | |
| 6 | |
| 1.1@400mA@4A | |
| 0.05@5mA@0.1A|0.15@100mA@2A|0.2@400mA@4A | |
| 4 | |
| 50 | |
| 100@10mA@2V|100@2A@2V|50@4A@2V|20@10A@2V | |
| 1200 | |
| -55 | |
| 200 | |
| Mounting | Through Hole |
| Package Height | 3.9 |
| Package Width | 2.28 |
| Package Length | 4.57 |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | E-Line |
| 3 | |
| Lead Shape | Through Hole |
If you require a general purpose BJT that can handle high voltages, then the NPN ZTX853 BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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