| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 400 | |
| 400 | |
| 5 | |
| 0.9@10mA@100mA | |
| 0.3@1mA@20mA|0.25@5mA@50mA|0.5@10mA@100mA | |
| 0.5 | |
| 100 | |
| 50@100mA@5V|50@1mA@5V|40@200mA@10V | |
| 1000 | |
| -55 | |
| 200 | |
| Mounting | Through Hole |
| Package Height | 3.9 |
| Package Width | 2.28 |
| Package Length | 4.57 |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | E-Line |
| 3 | |
| Lead Shape | Through Hole |
The three terminals of this NPN ZTX658 GP BJT from Diodes Zetex give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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